Infineon IPD200N15N3 G Type N-Channel MOSFET, 50 A, 150 V Enhancement, 5-Pin TO-252 IPD200N15N3GATMA1

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Subtotal (1 pack of 10 units)*

$27.92

(exc. GST)

$32.11

(inc. GST)

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Temporarily out of stock
  • 240 unit(s) shipping from 29 January 2026
  • Plus 150 unit(s) shipping from 29 January 2026
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Units
Per unit
Per Pack*
10 - 620$2.792$27.92
630 - 1240$2.723$27.23
1250 +$2.68$26.80

*price indicative

Packaging Options:
RS Stock No.:
171-1945
Mfr. Part No.:
IPD200N15N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Series

IPD200N15N3 G

Package Type

TO-252

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.36mm

Width

9.45 mm

Height

4.57mm

Automotive Standard

No

The Infineon IPD200N15N3 G is 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part.

Excellent switching performance

Worlds lowest R DS(on)

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