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ROHM Dual QH8K51 2 N-Channel MOSFET, 2 A, 100 V Enhancement, 8-Pin TSMT QH8K51TR

RS Stock No.:: 172-0345
Mfr. Part No.:: QH8K51TR
Brand:: ROHM

ROHM Dual QH8K51 2 N-Channel MOSFET, 2 A, 100 V Enhancement, 8-Pin TSMT QH8K51TR

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RS Stock No.:: 172-0345
Mfr. Part No.:: QH8K51TR
Brand:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ROHM
	Transistor Configuration	Dual
	Series	QH8K51
	Number of Elements per Chip	2
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	2 A
	Maximum Drain Source Voltage (Vds)	100 V
	Channel Mode	Enhancement
	Pin Count	8
	Package Type	TSMT
	Automotive Standard	No
	Forward Voltage (Vf)	1.2 V
	Height	800 μm
	Length	3.1 mm
	Maximum Drain Source Resistance (Rds)	355 mΩ
	Maximum Gate Source Voltage (Vgs)	20 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	1.5 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Surface
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	4.7 nC
	Width	2.5 mm

	Select all
	Brand ROHM
	Transistor Configuration Dual
	Series QH8K51
	Number of Elements per Chip 2
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 2 A
	Maximum Drain Source Voltage (Vds) 100 V
	Channel Mode Enhancement
	Pin Count 8
	Package Type TSMT
	Automotive Standard No
	Forward Voltage (Vf) 1.2 V
	Height 800 μm
	Length 3.1 mm
	Maximum Drain Source Resistance (Rds) 355 mΩ
	Maximum Gate Source Voltage (Vgs) 20 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 1.5 W
	Minimum Operating Temperature -55 °C
	Mount Type Surface
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 4.7 nC
	Width 2.5 mm