Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal 750 units (supplied on a reel)*

$1,098.00

(exc. GST)

$1,263.00

(inc. GST)

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  • Shipping from 08 March 2027
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Packaging Options:
RS Stock No.:
178-3851P
Mfr. Part No.:
SQS966ENW-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.1nC

Maximum Power Dissipation Pd

27.8W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.82V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Height

1.07mm

Standards/Approvals

No

Length

3.15mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® power MOSFET

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