Vishay Siliconix TrenchFET Type N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal 750 units (supplied on a reel)*

$909.75

(exc. GST)

$1,046.25

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 3,000 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
750 - 1490$1.213
1500 +$0.64

*price indicative

Packaging Options:
RS Stock No.:
178-3901P
Mfr. Part No.:
SiA106DJ-T1-GE3
Brand:
Vishay Siliconix
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Package Type

SC-70-6L

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.0185Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

19W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

6.9nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1mm

Width

1.35 mm

Length

2.2mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg Figure-of-Merit (FOM)

Tuned for the lowest RDS – Qoss

Related links