onsemi SUPERFET III N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 FCP165N65S3

RS Stock No.:: 178-4676
Mfr. Part No.:: FCP165N65S3
Brand:: onsemi

onsemi SUPERFET III N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 FCP165N65S3

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RS Stock No.:: 178-4676
Mfr. Part No.:: FCP165N65S3
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	650V
	Series	SUPERFET III
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	165mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	39nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	154W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS, Pb-Free, Halide Free
	Length	10.67mm
	Width	4.7mm
	Height	16.3mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 650V
	Series SUPERFET III
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 165mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 39nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 154W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS, Pb-Free, Halide Free
	Length 10.67mm
	Width 4.7mm
	Height 16.3mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 39 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)

Internal Gate Resistance: 4.6 Ω

Optimized Capacitance

Typ. RDS(on) = 140 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing