Vishay Single 1 N-Channel MOSFET, 60 A, 100 V, 8-Pin PowerPAK SO-8 SIR882ADP-T1-GE3
- RS Stock No.:
- 180-7355
- Mfr. Part No.:
- SIR882ADP-T1-GE3
- Brand:
- Vishay
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Currently unavailable
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- RS Stock No.:
- 180-7355
- Mfr. Part No.:
- SIR882ADP-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0087Ω | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Width | 5.26mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0087Ω | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Width 5.26mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 8.7mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 60A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET for fast switching
Applications
• DC/DC primary side switch
• Industrial sites
• Telecom/server 48V, full/half-bridge DC/DC
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
- Vishay Single 1 Type N-Channel MOSFET 100 V, 8-Pin PowerPAK SO-8 SIR882ADP-T1-GE3
- Vishay Single 1 Type P-Channel MOSFET 20 V, 6-Pin PowerPAK SC-70-6L
- Vishay Single TrenchFET Type P-Channel MOSFET 30 V, 8-Pin PowerPAK SO-8
- Vishay Type N-Channel MOSFET 30 V PowerPAK SO-8
- Vishay Si7164DP Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8
- Vishay Single TrenchFET Type P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET 20 V PowerPAK SO-8
- Vishay Type N-Channel MOSFET 30 V PowerPAK SO-8