Vishay Dual SI7956DP N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- RS Stock No.:
- 180-7886
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Brand:
- Vishay
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- RS Stock No.:
- 180-7886
- Mfr. Part No.:
- SI7956DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPack | |
| Series | SI7956DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 3.5W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Width | 5.26mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPack | ||
Series SI7956DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 3.5W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Width 5.26mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SI7956DP Series MOSFET, 150V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - SI7956DP-T1-GE3
This MOSFET is a dual N-channel transistor in a surface-mount PowerPack package designed for high-voltage switching and control tasks. It operates as an enhancement-mode device intended for use where compact, board-mounted power switching is required. The component supports moderate continuous currents and is suitable for applications that demand resilience across a wide ambient temperature range.
Features and Benefits:
• 150V drain-source rating enables high-voltage switching capability
• 0.1Ω maximum Rds(on) reduces conduction losses during operation
• 4.1A continuous drain current supports sustained load currents
• 17nC typical gate charge yields predictable switching energy
• 3.5W maximum power dissipation manages thermal load in circuits
• -50°C to 150°C operating range sustains performance in extremes
• 0.1Ω maximum Rds(on) reduces conduction losses during operation
• 4.1A continuous drain current supports sustained load currents
• 17nC typical gate charge yields predictable switching energy
• 3.5W maximum power dissipation manages thermal load in circuits
• -50°C to 150°C operating range sustains performance in extremes
Applications
• Suitable for motor driver half-bridge stages on compact boards
• Ideal for high-voltage power switching in industrial control
• Used for DC-DC converter phases requiring dual transistors
• Can be used for low-side switching in battery management systems
• Used with gate drivers where moderate gate charge is acceptable
• Ideal for high-voltage power switching in industrial control
• Used for DC-DC converter phases requiring dual transistors
• Can be used for low-side switching in battery management systems
• Used with gate drivers where moderate gate charge is acceptable
What pin count and package type does it use for PCB layout?
It is supplied in an 8-pin PowerPack surface-mount package suitable for dense board layouts and thermal conduction through the package body.
How does the device behave thermally under load?
The device has a 3.5W maximum power dissipation rating and can operate up to 150°C, so thermal management such as copper area or heatsinking should be sized to keep junction temperatures within limits.
What gate voltage limitations must be observed during drive design?
The maximum gate-to-source voltage is 20V, so gate-drive circuits should stay within this threshold to avoid device damage.
Are there any constraints on transistor configuration for circuit design?
The component contains two N-channel transistors in a dual configuration, allowing complementary switching arrangements or parallel operation depending on the schematic.
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