Vishay Single Type N-Channel Power MOSFET, 10 A, 400 V, 3-Pin TO-263 IRF740ALPBF
- RS Stock No.:
- 180-8642
- Mfr. Part No.:
- IRF740ALPBF
- Brand:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | $5.524 | $27.62 |
| 15 - 20 | $5.386 | $26.93 |
| 25 + | $5.306 | $26.53 |
*price indicative
- RS Stock No.:
- 180-8642
- Mfr. Part No.:
- IRF740ALPBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-263 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.55Ω | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.65mm | |
| Height | 4.83mm | |
| Width | 10.67mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-263 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.55Ω | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 9.65mm | ||
Height 4.83mm | ||
Width 10.67mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740ALPBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-conversion roles in industrial electronics. It operates in demanding thermal environments and suits designs requiring a three-terminal device with robust voltage handling and moderate current capability.
Features and Benefits:
• 400V drain rating for high-voltage switching applications
• 10A continuous drain current to support sustained loads
• 0.55Ω Rds(on) for controlled conduction losses
• 125W power dissipation enabling significant thermal throughput
• 36nC typical gate charge reducing drive energy requirements
• 30V maximum gate-source voltage for standard gate-drive compatibility
• 10A continuous drain current to support sustained loads
• 0.55Ω Rds(on) for controlled conduction losses
• 125W power dissipation enabling significant thermal throughput
• 36nC typical gate charge reducing drive energy requirements
• 30V maximum gate-source voltage for standard gate-drive compatibility
Applications
• Suitable for offline SMPS primary switching stages
• Ideal for power-factor-correction circuits in supplies
• Used with motor-control front-ends for low-speed drives
• Can be used for industrial lighting ballast switching
• Useful in high-voltage test and measurement equipment
• Ideal for power-factor-correction circuits in supplies
• Used with motor-control front-ends for low-speed drives
• Can be used for industrial lighting ballast switching
• Useful in high-voltage test and measurement equipment
What thermal range can it withstand during operation?
It is rated to operate from -55°C up to 150°C, allowing use across wide ambient and elevated junction conditions.
Which packaging form factor does it use for PCB mounting?
It is supplied in a TO-263 package, providing a flat power tab and three terminals for surface-mount assembly.
Are there environmental or materials standards associated with it?
The device complies with RoHS 2002/95/EC and follows IEC 61249-2-21 material specifications.
What gate-drive considerations arise from its gate charge?
With a typical Qg of 36nC at Vgs, gate drivers must supply sufficient transient current to achieve the required switching speed without excessive delay.
Related links
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