Vishay Single 1 Type N-Channel Power MOSFET, 4.1 A, 800 V, 3-Pin TO-262 IRFBE30LPBF
- RS Stock No.:
- 180-8664
- Mfr. Part No.:
- IRFBE30LPBF
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
$32.82
(exc. GST)
$37.745
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
In Stock
- Plus 20 unit(s) shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | $6.564 | $32.82 |
| 15 - 20 | $6.406 | $32.03 |
| 25 + | $6.30 | $31.50 |
*price indicative
- RS Stock No.:
- 180-8664
- Mfr. Part No.:
- IRFBE30LPBF
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-262 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-262 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Power MOSFET, 800V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRFBE30LPBF
This power MOSFET is an N-channel transistor designed for high-voltage switching and power conversion tasks in industrial electronics. Housed in a TO-262 package, it serves as a single-element power transistor capable of handling elevated drain-source voltages and sustained power dissipation across a wide thermal range, making it suitable for demanding operating conditions where robust voltage endurance is required.
Features and Benefits:
• 800V drain capability enabling high-voltage switching
• 125W power dissipation allowing sustained thermal load
• 4.1A continuous drain current for moderate-load applications
• 3Ω Rds providing predictable on-resistance characteristics
• 78nC gate charge for controlled switching transitions
• 20V Vgs maximum protecting gate integrity
• 125W power dissipation allowing sustained thermal load
• 4.1A continuous drain current for moderate-load applications
• 3Ω Rds providing predictable on-resistance characteristics
• 78nC gate charge for controlled switching transitions
• 20V Vgs maximum protecting gate integrity
Applications
• Suitable for industrial high-voltage power supplies
• Ideal for switch-mode power conversion stages
• Used with motor drive circuits requiring high Vds
• Can be used for overload protection and snubber circuits
• Useful in power management where an elevated temperature range matters
• Ideal for switch-mode power conversion stages
• Used with motor drive circuits requiring high Vds
• Can be used for overload protection and snubber circuits
• Useful in power management where an elevated temperature range matters
What temperature extremes can it withstand during operation?
It operates across a wide thermal span from -55°C up to 150°C, suitable for environments with significant temperature variation.
How is gate protection maintained during use?
The maximum permissible gate-to-source voltage is 20V, defining the threshold for safe gate-drive amplitudes to avoid damage.
What package should be considered for thermal and mounting needs?
The TO-262 package provides a robust mounting format with three pins and supports heat dissipation compatible with the device’s 125W rating.
How many active elements are contained on the chip?
The device comprises a single active element per chip, simplifying circuit topology for single-transistor configurations.
Related links
- Vishay Single 1 Type N-Channel Power MOSFET 800 V, 3-Pin
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay Single 1 Type N-Channel Power MOSFET 500 V TO-220FP
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin
- Vishay Single 1 Type N-Channel Power MOSFET 200 V TO-263
- Vishay Single 1 Type N-Channel Power MOSFET 500 V
- Vishay Single 1 Type N-Channel Power MOSFET 500 V