Toshiba Type N-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin USM SSM3K7002CFU,LF(T
- RS Stock No.:
- 182-5548
- Mfr. Part No.:
- SSM3K7002CFU,LF(T
- Brand:
- Toshiba
Temporarily out of stock
- RS Stock No.:
- 182-5548
- Mfr. Part No.:
- SSM3K7002CFU,LF(T
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | USM | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.27nC | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Height | 0.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type USM | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.27nC | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2mm | ||
Height 0.85mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
Gate-Source diode for protection
Low drain-source on-resistance
RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA)
RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA)
RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA)
Applications
High-Speed Switching
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