STMicroelectronics STB N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal 250 units (supplied on a reel)*

$1,357.50

(exc. GST)

$1,560.00

(inc. GST)

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  • Shipping from 08 February 2027
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Units
Per unit
250 - 495$5.43
500 +$5.344

*price indicative

Packaging Options:
RS Stock No.:
192-4936P
Mfr. Part No.:
STB18N60M6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

STB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.8nC

Maximum Gate Source Voltage Vgs

25V

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

150°C

Height

4.37mm

Width

9.35mm

Standards/Approvals

No

Length

10.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

Zener-protected

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