onsemi N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN NTMFSC0D9N04CL
- RS Stock No.:
- 195-2663
- Mfr. Part No.:
- NTMFSC0D9N04CL
- Brand:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (3000 units, on reels of 3000)*
$4,941.00
(exc. GST)
$5,682.00
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
Temporarily out of stock
- Shipping from 08 October 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $1.647 | $4,941.00 |
| 6000 - 9000 | $1.608 | $4,824.00 |
| 12000 + | $1.569 | $4,707.00 |
*price indicative
- RS Stock No.:
- 195-2663
- Mfr. Part No.:
- NTMFSC0D9N04CL
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 850μΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 143nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 167W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5mm | |
| Height | 0.95mm | |
| Length | 5.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 850μΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 143nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 167W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5mm | ||
Height 0.95mm | ||
Length 5.9mm | ||
Automotive Standard No | ||
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Application
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
Related links
- onsemi Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN NTMFSC0D9N04CL
- onsemi Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN NVMFSC0D9N04C
- onsemi Type N-Channel MOSFET 80 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 60 V Enhancement, 8-Pin DFN
- onsemi Type N-Channel MOSFET 40 V Enhancement, 8-Pin DFN NVMTS0D7N04CLTXG