STMicroelectronics SCT Type N-Channel MOSFET, 95 A, 650 V Depletion, 7-Pin H2PAK
- RS Stock No.:
- 202-5481P
- Mfr. Part No.:
- SCTH100N65G2-7AG
- Brand:
- STMicroelectronics
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View bulk pricing optionsSubtotal 250 units (supplied on a reel)*
$14,982.50
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$17,230.00
(inc. GST)
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- Shipping from 12 April 2027
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Units | Per unit |
|---|---|
| 250 - 499 | $59.93 |
| 500 + | $50.75 |
*price indicative
- RS Stock No.:
- 202-5481P
- Mfr. Part No.:
- SCTH100N65G2-7AG
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 360W | |
| Forward Voltage Vf | 2.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 15.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 360W | ||
Forward Voltage Vf 2.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 15.25mm | ||
Automotive Standard No | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
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