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onsemi NTMFS006N08MC Type N-Channel MOSFET, 32 A, 80 V Enhancement, 8-Pin PQFN

RS Stock No.:: 205-2424
Mfr. Part No.:: NTMFS006N08MC
Brand:: onsemi

onsemi NTMFS006N08MC Type N-Channel MOSFET, 32 A, 80 V Enhancement, 8-Pin PQFN

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

$5,499.00

(exc. GST)

$6,324.00

(inc. GST)

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Units	Per unit	Per Reel*
3000 - 3000	$1.833	$5,499.00
6000 - 27000	$1.787	$5,361.00
30000 +	$1.609	$4,827.00

*price indicative

RS Stock No.:: 205-2424
Mfr. Part No.:: NTMFS006N08MC
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	32A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PQFN
	Series	NTMFS006N08MC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	30nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	78W
	Maximum Operating Temperature	150°C
	Length	6.1mm
	Width	5.1 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 32A
	Maximum Drain Source Voltage Vds 80V
	Package Type PQFN
	Series NTMFS006N08MC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 30nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 78W
	Maximum Operating Temperature 150°C
	Length 6.1mm
	Width 5.1 mm
	Standards/Approvals No
	Automotive Standard No

NTMFS006N08MC Datasheet

The ON Semiconductor Power Trench series 150V N-Channel MV MOSFET is produced using advanced process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max rDS(on) = 11.5mohm at VGS is 10V, ID is 35A

Low Conduction Loss

Max rDS(on) is 13.2mohm at VGS is 8V, ID is 18A

50% lower Qrr than other mosfet suppliers

Lowers switching noise /EMI

MSL1 robust package design

100% UIL tested

onsemi NTMFS006N08MC Type N-Channel MOSFET, 32 A, 80 V Enhancement, 8-Pin PQFN

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