Vishay E Type N-Channel Power MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-252 SIHD11N80AE-GE3
- RS Stock No.:
- 210-4979P
- Mfr. Part No.:
- SIHD11N80AE-GE3
- Brand:
- Vishay
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$1,849.50
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$2,127.00
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In Stock
- Plus 2,975 unit(s) shipping from 17 August 2026
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Units | Per unit |
|---|---|
| 750 - 1495 | $2.466 |
| 1500 + | $2.434 |
*price indicative
- RS Stock No.:
- 210-4979P
- Mfr. Part No.:
- SIHD11N80AE-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | E | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 391mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 78W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.4mm | |
| Height | 2.2mm | |
| Width | 6.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series E | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 391mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 78W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 9.4mm | ||
Height 2.2mm | ||
Width 6.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 800V Drain Source Voltage, 78W Power Dissipation - SIHD11N80AE-GE3
This power MOSFET is a high-voltage N-channel switching transistor designed for surface-mount power conversion and switching applications. It operates across a very wide temperature span and is intended for demanding environments where high drain-source voltage handling and moderate current capability are required, while conforming to RoHS restrictions.
Features and Benefits:
• 800V drain-source rating enables high-voltage topologies
• 8A continuous drain current supports moderate power circuits
• 391mΩ Rds(on) reduces conduction losses at rated current
• 78W maximum power dissipation allows substantial heat handling
• 28nC typical gate charge gives predictable switching energy
• 30V gate threshold accommodates standard gate-drive voltages
• 8A continuous drain current supports moderate power circuits
• 391mΩ Rds(on) reduces conduction losses at rated current
• 78W maximum power dissipation allows substantial heat handling
• 28nC typical gate charge gives predictable switching energy
• 30V gate threshold accommodates standard gate-drive voltages
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for half-bridge and boost converter stages
• Used with industrial motor-drive front-ends
• Can be used for offline charger and lighting control
• Appropriate for telecoms and power-distribution modules
• Ideal for half-bridge and boost converter stages
• Used with industrial motor-drive front-ends
• Can be used for offline charger and lighting control
• Appropriate for telecoms and power-distribution modules
What package and mounting style does it use?
It is supplied in a TO-252 package intended for surface-mount assembly to ease thermal coupling to PCB copper.
What thermal range can it withstand during operation?
It is rated to operate from -55°C up to 150°C, enabling use in harsh temperature conditions.
How does the forward voltage affect power-loss calculations?
A forward voltage of 1.2V should be included when estimating conduction and switching losses in diode-conducting intervals and synchronous arrangements.
What gate-drive limitations must be observed?
The maximum gate-source voltage is 30V, so gate drivers and protection must prevent excursions beyond this value.
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