Infineon OptiMOS Type N-Channel MOSFET, 50 A, 55 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

$3,030.00

(exc. GST)

$3,485.00

(inc. GST)

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  • 10,000 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 - 10000$1.212$3,030.00
12500 +$1.09$2,725.00

*price indicative

RS Stock No.:
214-4375
Mfr. Part No.:
IPD50N06S2L13ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

54nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

6.42 mm

Length

6.65mm

Standards/Approvals

No

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

Optimized total gate charge enables smaller driver output stages

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