Infineon HEXFET Type N-Channel MOSFET, 170 A, 75 V, 3-Pin TO-263

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 800 units)*

$2,500.80

(exc. GST)

$2,876.00

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 2,400 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 - 3200$3.126$2,500.80
4000 +$2.814$2,251.20

*price indicative

RS Stock No.:
214-4445
Mfr. Part No.:
IRF2907ZSTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

170A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

270nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has fast switching speed and improved repetitive avalanche rating.

It is Lead-free

It is capable of being wave soldered

Related links