Infineon HEXFET Type N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-252

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Subtotal (1 reel of 3000 units)*

$3,744.00

(exc. GST)

$4,305.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 12000$1.248$3,744.00
15000 +$1.123$3,369.00

*price indicative

RS Stock No.:
214-4456
Mfr. Part No.:
IRFR3710ZTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

140W

Typical Gate Charge Qg @ Vgs

100nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

Its design is extremely efficient and reliable

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