Infineon OptiMOS-T2 N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 214-9055P
- Mfr. Part No.:
- IPD90N04S403ATMA1
- Brand:
- Infineon
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Units | Per unit |
|---|---|
| 630 - 1230 | $2.287 |
| 1245 + | $2.251 |
*price indicative
- RS Stock No.:
- 214-9055P
- Mfr. Part No.:
- IPD90N04S403ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 94W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 94W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS-T2 Series MOSFET, 40V Maximum Drain Source Voltage, 90A Maximum Continuous Drain Current - IPD90N04S403ATMA1
This MOSFET is a surface-mount N-channel enhancement device designed for power switching and conversion in demanding environments. It operates across a wide temperature range and supports high continuous drain currents, making it suitable for thermal and electrical stress conditions in automotive and industrial contexts.
Features and Benefits:
• 40V maximum drain-source voltage enables robust low-voltage power stages
• 90A continuous drain current supports high-current delivery
• 3.2mΩ maximum Rds(on) minimises conduction losses under load
• 94W maximum power dissipation allows substantial heat handling
• 51nC typical gate charge permits predictable switching behaviour
• 20V maximum gate-source voltage preserves gate insulation margin
• 90A continuous drain current supports high-current delivery
• 3.2mΩ maximum Rds(on) minimises conduction losses under load
• 94W maximum power dissipation allows substantial heat handling
• 51nC typical gate charge permits predictable switching behaviour
• 20V maximum gate-source voltage preserves gate insulation margin
Applications
• Suitable for DC-DC converter power stages in vehicles
• Ideal for high-current load switching in automotive systems
• Used with surface-mount assemblies requiring Compact power devices
• Can be used for synchronous rectification in converters
• Used for thermal-tolerant power stages exposed to wide temperatures
• Ideal for high-current load switching in automotive systems
• Used with surface-mount assemblies requiring Compact power devices
• Can be used for synchronous rectification in converters
• Used for thermal-tolerant power stages exposed to wide temperatures
What ambient range can it tolerate during operation?
It is rated to function from −55°C up to 175°C, providing wide thermal tolerance.
Which package type is used for board mounting?
It is supplied in a TO-252 package for surface-mount applications.
How many electrical connections does the device provide?
It has three pins for standard drain, gate and source connections.
What is the channel polarity and mode of operation?
The device uses an N-type channel and operates in enhancement mode.
What forward voltage can be expected during conduction?
The forward voltage is specified at 1.3V for conduction characterisation.
Related links
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1
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