Infineon HEXFET N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET
- RS Stock No.:
- 218-3102P
- Mfr. Part No.:
- IRF6775MTRPBF
- Brand:
- Infineon
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View bulk pricing optionsSubtotal 1200 units (supplied on a reel)*
$2,817.60
(exc. GST)
$3,240.00
(inc. GST)
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In Stock
- Plus 4,270 unit(s) shipping from 16 November 2026
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Units | Per unit |
|---|---|
| 1200 - 2390 | $2.348 |
| 2400 + | $2.313 |
*price indicative
- RS Stock No.:
- 218-3102P
- Mfr. Part No.:
- IRF6775MTRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DirectFET | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Width | 3.95mm | |
| Standards/Approvals | No | |
| Height | 680μm | |
| Length | 4.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DirectFET | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Width 3.95mm | ||
Standards/Approvals No | ||
Height 680μm | ||
Length 4.85mm | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
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