Infineon HEXFET N-Channel MOSFET, 31 A, 100 V Enhancement, 3-Pin TO-252

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Subtotal 760 units (supplied on a reel)*

$1,661.36

(exc. GST)

$1,910.64

(inc. GST)

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Packaging Options:
RS Stock No.:
218-3106P
Mfr. Part No.:
IRFR3410TRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

31Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

110W

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

2.39mm

Height

6.22mm

Length

6.73mm

Automotive Standard

No

The Infineon HEXFET series single N-Channel power MOSFET integrated with DPAK (TO-252) type package. This MOSFET is mainly used in high frequency DC-DC converters.

RoHS Compliant

175°C Operating Temperature

Fast switching

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