Infineon HEXFET Type N-Channel MOSFET, 27 A, 55 V, 3-Pin TO-252

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RS Stock No.:
218-3110
Mfr. Part No.:
IRFR4105TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

68W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.045V

Maximum Operating Temperature

175°C

Height

6.22mm

Standards/Approvals

No

Length

6.73mm

Automotive Standard

No

The Infineon HEXFET series 55V N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mounting using vapour phase, infrared, or wave soldering technique.

Ultra Low On-Resistance

Fast Switching

Lead free

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