STMicroelectronics SCTW40N N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW40N120G2V
- RS Stock No.:
- 219-4227
- Mfr. Part No.:
- SCTW40N120G2V
- Brand:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 219-4227
- Mfr. Part No.:
- SCTW40N120G2V
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTW40N | |
| Package Type | Hip-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Forward Voltage Vf | 3.3V | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Width | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTW40N | ||
Package Type Hip-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Forward Voltage Vf 3.3V | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.75mm | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Width 5.15mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Related links
- STMicroelectronics SCTW40N Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCTW40N120G2V
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW70N Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 3-Pin Hip-247 SCT040W120G3AG