Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1
- RS Stock No.:
- 219-5994
- Mfr. Part No.:
- IPD95R2K0P7ATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
$2,187.50
(exc. GST)
$2,515.00
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
Temporarily out of stock
- 5,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | $0.875 | $2,187.50 |
| 12500 + | $0.787 | $1,967.50 |
*price indicative
- RS Stock No.:
- 219-5994
- Mfr. Part No.:
- IPD95R2K0P7ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 37W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 37W | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 950V Drain Source Voltage, 4A Continuous Drain Current - IPD95R2K0P7ATMA1
This MOSFET is a high-voltage N-channel enhancement transistor designed for switching and power conversion in demanding electronic systems. It operates across a wide ambient range and is intended for surface-mounted applications where a compact, thermally capable switching device is required.
Features and Benefits:
• 950V drain-source rating enables high-voltage switching applications
• 2mΩ Rds(on) minimises conduction losses during high-current operation
• 10nC gate charge reduces drive energy and switching-related losses
• 4A continuous drain current supports moderate load currents reliably
• 37W maximum power dissipation allows significant thermal headroom
• 20V gate-source capability accommodates common gate drive voltages
• 2mΩ Rds(on) minimises conduction losses during high-current operation
• 10nC gate charge reduces drive energy and switching-related losses
• 4A continuous drain current supports moderate load currents reliably
• 37W maximum power dissipation allows significant thermal headroom
• 20V gate-source capability accommodates common gate drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with industrial motor-drive front-ends
• Can be used for energy conversion in renewable systems
• Suitable for Compact surface-mount power modules
• Ideal for switch-mode power supply primary switches
• Used with industrial motor-drive front-ends
• Can be used for energy conversion in renewable systems
• Suitable for Compact surface-mount power modules
What temperature extremes can it tolerate in operation?
It is rated to operate from −55°C up to 150°C, enabling use in wide thermal envelopes.
How is it packaged for PCB assembly?
It comes in a TO-252 surface-mount package suitable for soldered board mounting.
What forward conduction characteristic is typical when conducting?
The device exhibits a forward voltage of 0.9V during conduction under appropriate conditions.
How many electrical connections does it present for circuit integration?
It provides three pins for standard MOSFET Terminal connections.
Related links
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251 IPU95R2K0P7AKMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 950 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 950 V Enhancement, 3-Pin SOT-223 IPN95R1K2P7ATMA1
- Infineon CoolMOS P7 SJ Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-251