MPN

onsemi NTH4LN019N N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247

RS Stock No.:: 221-6708P
Mfr. Part No.:: NTH4LN019N65S3H
Brand:: onsemi

onsemi NTH4LN019N N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247

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Units	Per unit	Saving
10 - 99	$55.85	-
100 - 249	$54.18	$167.00
250 - 499	$52.53	$830.00
500 +	$50.95	$2,450.00

*price indicative

RS Stock No.:: 221-6708P
Mfr. Part No.:: NTH4LN019N65S3H
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	75A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-247
	Series	NTH4LN019N
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	19.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	625W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	282nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	15.8mm
	Standards/Approvals	These Devices are Pb-Free and are RoHS
	Width	5.2mm
	Height	22.74mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 75A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-247
	Series NTH4LN019N
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 19.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 625W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 282nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 15.8mm
	Standards/Approvals These Devices are Pb-Free and are RoHS
	Width 5.2mm
	Height 22.74mm
	Automotive Standard No

Datasheet - NTH4LN019N65S3H

The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.

Ultra low gate charge

low effective output capacitance 2495 pF

100% avalanche tested