Infineon OptiMOS N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S4L12ATMA1
- RS Stock No.:
- 222-4667
- Mfr. Part No.:
- IPD60N10S4L12ATMA1
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | $1.188 | $2,970.00 |
| 12500 + | $1.069 | $2,672.50 |
*price indicative
- RS Stock No.:
- 222-4667
- Mfr. Part No.:
- IPD60N10S4L12ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Height | 2.3mm | |
| Width | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Height 2.3mm | ||
Width 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 60A Maximum Continuous Drain Current - IPD60N10S4L12ATMA1
This MOSFET is a high-voltage N-channel switch designed for demanding electronic power stages and automotive environments. It operates over a wide temperature range and is intended for surface-mount assemblies requiring robust switching performance and thermal handling.
Features and Benefits:
• 100 V drain rating enabling high-voltage switching capability
• 60 A continuous drain current supporting heavy current loads
• 12 mΩ Rds(on) reducing conduction losses in power paths
• 94 W power dissipation improving thermal endurance under load
• 38 nC typical gate charge allowing predictable switching energy
• 16 V maximum gate drive permitting flexible gate-voltage choices
• 60 A continuous drain current supporting heavy current loads
• 12 mΩ Rds(on) reducing conduction losses in power paths
• 94 W power dissipation improving thermal endurance under load
• 38 nC typical gate charge allowing predictable switching energy
• 16 V maximum gate drive permitting flexible gate-voltage choices
Applications
• Suitable for automotive power converters requiring AEC‑Q101 compliance
• Ideal for DC-DC converters in transport and industrial systems
• Used for motor-drive half-bridge stages in EV subsystems
• Can be used for synchronous rectification in power supplies
• Used with Compact surface-mount assemblies on thermal PCBs
• Ideal for DC-DC converters in transport and industrial systems
• Used for motor-drive half-bridge stages in EV subsystems
• Can be used for synchronous rectification in power supplies
• Used with Compact surface-mount assemblies on thermal PCBs
What temperature extremes can it withstand in operation?
It is specified to operate from −55 °C up to 175 °C, allowing use in high-temperature environments.
What packaging and mounting considerations apply for thermal management?
It is supplied in a TO‑252 surface-mount package that facilitates board-mounted heat dissipation and standard solder reflow attachment.
What gate-voltage limits should be observed to avoid device stress?
The maximum gate-to-source voltage is 16 V and gate-drive circuitry should not exceed this to prevent gate damage.
What channel conduction mode and type does it employ?
It uses an enhancement-mode N-channel configuration suitable for low-side and high-side switching when gate drive is appropriate.
Related links
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