Infineon CoolMOS Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252 IPD60R280P7ATMA1

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Subtotal (1 pack of 10 units)*

$24.90

(exc. GST)

$28.60

(inc. GST)

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  • 1,720 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 10$2.49$24.90
20 - 90$2.416$24.16
100 - 240$2.344$23.44
250 - 490$2.274$22.74
500 +$2.207$22.07

*price indicative

Packaging Options:
RS Stock No.:
222-4673
Mfr. Part No.:
IPD60R280P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

53W

Forward Voltage Vf

0.9V

Length

6.73mm

Height

2.41mm

Width

6.22 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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