Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF

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Subtotal (1 pack of 10 units)*

$37.50

(exc. GST)

$43.10

(inc. GST)

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Units
Per unit
Per Pack*
10 - 10$3.75$37.50
20 - 90$3.682$36.82
100 - 240$3.614$36.14
250 - 490$3.551$35.51
500 +$3.487$34.87

*price indicative

Packaging Options:
RS Stock No.:
222-4739
Mfr. Part No.:
IRF6636TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

20V

Package Type

DirectFET

Series

HEXFET

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

6.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

42W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Width

3.95 mm

Length

4.85mm

Height

0.68mm

Standards/Approvals

No

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

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