Vishay TrenchFET N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3
- RS Stock No.:
- 228-2825
- Mfr. Part No.:
- SI7116BDN-T1-GE3
- Brand:
- Vishay
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 228-2825
- Mfr. Part No.:
- SI7116BDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31.4nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 750μm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31.4nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 750μm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
Very low Qg and Qoss reduce power loss and
improve efficiency
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
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