Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3
- RS Stock No.:
- 228-2835
- Mfr. Part No.:
- SIA938DJT-T1-GE3
- Brand:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | $1.488 | $37.20 |
| 50 - 75 | $1.461 | $36.53 |
| 100 - 225 | $1.434 | $35.85 |
| 250 - 975 | $1.408 | $35.20 |
| 1000 + | $1.381 | $34.53 |
*price indicative
- RS Stock No.:
- 228-2835
- Mfr. Part No.:
- SIA938DJT-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 7.8W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 7.8W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Vishay TrenchFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.5A Maximum Continuous Drain Current - SIA938DJT-T1-GE3
This MOSFET is a compact dual N-channel enhancement-mode transistor designed for surface-mount power management. It offers a low-voltage switching solution suitable for dense electronic assemblies and is intended for applications requiring dual-channel control in an 8-pin SC-70 package. The device handles moderate continuous currents and dissipates limited power while operating across a wide temperature span.
Features and Benefits:
• Low on-resistance of 21.5 mΩ reduces conduction losses
• Maximum drain voltage of 20V supports low-voltage systems
• Continuous drain current rating of 4.5A enables moderate loads
• Gate charge of 3.5 nC allows faster switching and lower drive energy
• Power dissipation capability of 7.8W aids thermal budgeting
• Operating range -55 to 150 °C permits high-temperature deployment
• Maximum drain voltage of 20V supports low-voltage systems
• Continuous drain current rating of 4.5A enables moderate loads
• Gate charge of 3.5 nC allows faster switching and lower drive energy
• Power dissipation capability of 7.8W aids thermal budgeting
• Operating range -55 to 150 °C permits high-temperature deployment
Applications
• Suitable for battery-powered DC distribution stages
• Ideal for synchronous rectification in power converters
• Used for dual-channel load switching on compact boards
• Can be used for motor-drive low-voltage stages
• Suited to thermally challenged environments requiring high-temperature parts
• Ideal for synchronous rectification in power converters
• Used for dual-channel load switching on compact boards
• Can be used for motor-drive low-voltage stages
• Suited to thermally challenged environments requiring high-temperature parts
What mounting method does it support on a PCB?
It is supplied for surface-mount assembly in an 8-pin SC-70 package, facilitating automated soldering and compact layout.
How does the device handle gate-drive limits?
The gate-source voltage must not exceed 12V to prevent gate-dielectric stress during operation.
Is the transistor suitable for complementary configurations?
It is a dual N-channel arrangement with two elements per die, allowing paired switch topologies where two N-type devices are required.
What thermal extremes can it tolerate in use?
The device is rated to operate down to -55 °C and up to 150 °C, permitting use across a broad thermal envelope.
Related links
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