Vishay E Type N-Channel MOSFET, 21 A, 800 V Enhancement, 3-Pin TO-263

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

$184.35

(exc. GST)

$212.00

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 900 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 - 50$3.687$184.35
100 - 450$3.62$181.00
500 - 950$3.555$177.75
1000 +$3.491$174.55

*price indicative

RS Stock No.:
228-2846
Mfr. Part No.:
SIHB24N80AE-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

800V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

208W

Typical Gate Charge Qg @ Vgs

59nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links