Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2000 units)*

$4,116.00

(exc. GST)

$4,734.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
2000 - 8000$2.058$4,116.00
10000 +$1.852$3,704.00

*price indicative

RS Stock No.:
228-2848
Mfr. Part No.:
SIHD11N80AE-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Related links