Vishay E Type N-Channel MOSFET, 8 A, 850 V Enhancement, 3-Pin TO-252 SIHD11N80AE-T1-GE3

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Subtotal (1 pack of 5 units)*

$19.68

(exc. GST)

$22.63

(inc. GST)

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  • 1,995 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45$3.936$19.68
50 - 95$3.814$19.07
100 - 245$3.702$18.51
250 - 995$3.594$17.97
1000 +$3.49$17.45

*price indicative

Packaging Options:
RS Stock No.:
228-2849
Mfr. Part No.:
SIHD11N80AE-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

450mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

78W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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