Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

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Subtotal (1 pack of 10 units)*

$18.49

(exc. GST)

$21.26

(inc. GST)

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Per unit
Per Pack*
10 - 40$1.849$18.49
50 - 90$1.793$17.93
100 - 240$1.736$17.36
250 - 990$1.682$16.82
1000 +$1.632$16.32

*price indicative

Packaging Options:
RS Stock No.:
228-2852
Mfr. Part No.:
SiHD5N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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