Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3
- RS Stock No.:
- 228-2975
- Mfr. Part No.:
- SQW33N65EF-GE3
- Brand:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $11.30 | $22.60 |
| 10 - 24 | $10.965 | $21.93 |
| 26 - 98 | $10.64 | $21.28 |
| 100 - 498 | $10.325 | $20.65 |
| 500 + | $10.02 | $20.04 |
*price indicative
- RS Stock No.:
- 228-2975
- Mfr. Part No.:
- SQW33N65EF-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247AD | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 109mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247AD | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 109mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Continuous Drain Current - SQW33N65EF-GE3
This power MOSFET is a high-voltage N-channel transistor designed for demanding power conversion and control roles. It operates across a wide ambient range and is supplied in a through-hole package suitable for heatsinking and robust mounting in industrial or automotive contexts. The device supports enhancement-mode switching for efficient high-voltage applications and is RoHS-compliant.
Features and Benefits:
• 700V drain capability enables high-voltage system design
• 34A continuous current handles substantial load currents
• 109mΩ Rds(on) reduces conduction losses during operation
• 375W power dissipation supports high-power switching cycles
• 115nC typical gate charge enables predictable gate-drive sizing
• 30V gate tolerance allows common gate-driver selection
• 34A continuous current handles substantial load currents
• 109mΩ Rds(on) reduces conduction losses during operation
• 375W power dissipation supports high-power switching cycles
• 115nC typical gate charge enables predictable gate-drive sizing
• 30V gate tolerance allows common gate-driver selection
Applications
• Suitable for high-voltage motor-drive stages
• Ideal for front-end power-factor correction circuits
• Used with switching supplies in renewable-energy inverters
• Can be used for automotive traction inverters requiring AEC-Q101
• Appropriate for industrial welding and plasma-power modules
• Ideal for front-end power-factor correction circuits
• Used with switching supplies in renewable-energy inverters
• Can be used for automotive traction inverters requiring AEC-Q101
• Appropriate for industrial welding and plasma-power modules
What thermal range can it withstand in harsh installations?
It is rated to operate from -55°C up to 175°C, allowing use in both cold-start and high-heat environments.
Which package facilitates mounting and heat removal?
The TO-247AD through-hole package permits secure bolting to a heatsink for improved thermal management.
How does the channel type affect switching behaviour?
The N-channel enhancement-mode structure provides normally-off operation and efficient conduction when driven above the gate threshold.
Is it suitable for automotive qualification requirements?
It meets AEC-Q101 standards, making it appropriate for many vehicle electronics power stages.
Related links
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