Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 229-1819P
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Brand:
- Infineon
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View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
$75.84
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$87.22
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In Stock
- Plus 605 unit(s) shipping from 17 August 2026
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Units | Per unit |
|---|---|
| 10 - 95 | $7.584 |
| 100 - 245 | $7.354 |
| 250 - 495 | $7.126 |
| 500 + | $6.914 |
*price indicative
- RS Stock No.:
- 229-1819P
- Mfr. Part No.:
- IPB120P04P4L03ATMA2
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2
The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.
Summary of Features
•P-channel - Logic Level - Enhancement mode
•AEC qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (RoHS compliant)
•100% Avalanche tested
Benefits
•No charge pump required for high side drive.
•Simple interface drive circuit
•World's lowest RDSon at 40V
•Highest current capability
•Lowest switching and conduction power losses for highest thermal efficiency
•Robust packages with superior quality and reliability
•Standard packages TO-252, TO-263, TO-220, TO-262
Potential Applications
•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
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