STMicroelectronics SCTW N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247
- RS Stock No.:
- 230-0094P
- Mfr. Part No.:
- SCTWA60N120G2-4
- Brand:
- STMicroelectronics
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 230-0094P
- Mfr. Part No.:
- SCTWA60N120G2-4
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTW | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 3V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 21.1mm | |
| Width | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTW | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 3V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 21.1mm | ||
Width 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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