STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2

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Subtotal 10 units (supplied on a continuous strip)*

$198.40

(exc. GST)

$228.20

(inc. GST)

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10 - 99$19.84
100 - 249$19.47
250 - 499$19.14
500 +$14.79

*price indicative

Packaging Options:
RS Stock No.:
233-3041P
Mfr. Part No.:
STH12N120K5-2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK

Series

STB37N60

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

690mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

44.2nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.8mm

Length

10.4mm

Automotive Standard

No

The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Worldwide best FOM (figure of merit)

Ultra-low gate charge

100% avalanche tested

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