Renesas Electronics BEAM N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A

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$18.21

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$20.94

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5 - 45$3.642$18.21-
50 - 95$3.578$17.89$3.20
100 - 245$3.514$17.57$12.80
250 - 995$3.45$17.25$48.00
1000 +$3.388$16.94$254.00

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Packaging Options:
RS Stock No.:
234-7153
Mfr. Part No.:
RJK0391DPA-00#J5A
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

30V

Series

BEAM

Package Type

WPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0029Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

50W

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

850μm

Standards/Approvals

Pb-Free, Halogen-Free

Length

6.1mm

Width

5.9mm

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 30 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free

1 Tape of 1
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Each (In a Pack of 100)
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Each (Supplied on a Reel)
$0.165

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