Renesas Electronics N-Channel MOSFET, 25 A, 60 V Enhancement, 4-Pin SOT-669 RJK0651DPB-00#J5
- RS Stock No.:
- 234-7155
- Mfr. Part No.:
- RJK0651DPB-00#J5
- Brand:
- Renesas Electronics
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$25.14
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$28.91
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- 2,500 unit(s) shipping from 18 December 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 45 | $5.028 | $25.14 | - |
| 50 - 95 | $4.94 | $24.70 | $4.40 |
| 100 - 245 | $4.848 | $24.24 | $18.00 |
| 250 - 995 | $4.756 | $23.78 | $68.00 |
| 1000 + | $4.668 | $23.34 | $360.00 |
*price indicative
- RS Stock No.:
- 234-7155
- Mfr. Part No.:
- RJK0651DPB-00#J5
- Brand:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 45W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 45W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 60 V. It is capable of 4.5 V gate drive.
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
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Related links
- Renesas Electronics Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-669 RJK0651DPB-00#J5
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