Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T
- RS Stock No.:
- 236-3569
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
This image is representative of the product range
Get a bulk buy discount
Add 100 more to save 1%
View bulk pricing optionsSubtotal (1 pack of 50 units)*
$147.95
(exc. GST)
$170.15
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
In Stock
- Plus 100 unit(s) shipping from 16 November 2026
- Plus 12,400 unit(s) shipping from 23 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 50 - 50 | $2.959 | $147.95 | - |
| 100 - 200 | $2.905 | $145.25 | 1% |
| 250 - 450 | $2.854 | $142.70 | 3% |
| 500 - 950 | $2.799 | $139.95 | 5% |
| 1000 + | $2.751 | $137.55 | 7% |
*price indicative
- RS Stock No.:
- 236-3569
- Mfr. Part No.:
- SSM3J338R,LF(T
- Brand:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26.3mΩ | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 19.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Forward Voltage Vf | 750mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.4mm | |
| Standards/Approvals | No | |
| Height | 800μm | |
| Width | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26.3mΩ | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 19.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10V | ||
Forward Voltage Vf 750mV | ||
Maximum Operating Temperature 150°C | ||
Length 2.4mm | ||
Standards/Approvals No | ||
Height 800μm | ||
Width 2.9mm | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
- Toshiba Type P-Channel MOSFET 12 VLF(T
- Toshiba Type P-Channel MOSFET 20 V, 3-Pin SOT-23
- Toshiba Type P-Channel MOSFET 20 VLF(T
- Toshiba Type P-Channel MOSFET 60 V, 3-Pin SOT-23
- Toshiba Type P-Channel MOSFET 60 VLF(T
- Toshiba Type P-Channel MOSFET 60 VLF(T
- Toshiba Type P-Channel MOSFET 30 V EnhancementLF(T
- Toshiba Type N-Channel MOSFET 60 VLF(T