Infineon OptiMOS™ N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5ATMA1
- RS Stock No.:
- 236-3642
- Mfr. Part No.:
- BSC005N03LS5ATMA1
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | $2.566 | $12,830.00 |
| 10000 - 10000 | $2.467 | $12,335.00 |
| 15000 + | $2.436 | $12,180.00 |
*price indicative
- RS Stock No.:
- 236-3642
- Mfr. Part No.:
- BSC005N03LS5ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 433A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 188W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.35mm | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 433A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 188W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.35mm | ||
Height 1.1mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
Infineon OptiMOS™ Series MOSFET, 30V Maximum Drain Source Voltage, 433A Maximum Continuous Drain Current - BSC005N03LS5ATMA1
This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding thermal environments. It operates across an extended temperature span and is intended for applications requiring low conduction losses and substantial continuous drain current capacity while mounted in a TDSON package.
Features and Benefits:
• 433 A continuous drain current enables heavy-current switching
• 5.5 mΩ low Rds(on) reduces conduction losses under load
• 30 V drain-source rating allows moderate-voltage power stages
• 188 W power dissipation supports high-power handling
• 59 nC gate charge permits predictable gate-drive energy planning
• ±20 V maximum gate-source voltage gives wide drive margin
• 5.5 mΩ low Rds(on) reduces conduction losses under load
• 30 V drain-source rating allows moderate-voltage power stages
• 188 W power dissipation supports high-power handling
• 59 nC gate charge permits predictable gate-drive energy planning
• ±20 V maximum gate-source voltage gives wide drive margin
Applications
• Suitable for high-current DC-DC converters and regulators
• Ideal for server power rails and telecomms power modules
• Used with motor-drive stages requiring high continuous current
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power assemblies
• Ideal for server power rails and telecomms power modules
• Used with motor-drive stages requiring high continuous current
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power assemblies
What package considerations affect thermal management?
The TDSON surface-mount package provides a low-profile footprint and requires appropriate PCB copper area or thermal vias to dissipate its 188 W rating effectively within board-level thermal constraints.
How does the device handle harsh ambient temperatures?
It is specified to operate from -55 °C to 175 °C, which allows use across a wide temperature range without derating for many high-temperature environments.
What gate-drive requirements should be observed?
Drive circuits must keep gate voltage within ±20 V and account for the 59 nC total gate charge when sizing driver Peak current and switching timing.
How should designers plan for conduction and switching losses?
Use the 5.5 mΩ Rds(on) to estimate I^2R conduction losses and include energy for charging the 59 nC gate when calculating overall thermal and efficiency budgets.
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