Vishay TrenchFET Gen IV Type P-Channel MOSFET, 445 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3
- RS Stock No.:
- 239-8678
- Mfr. Part No.:
- SQJQ130EL-T1_GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
$13.67
(exc. GST)
$15.72
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Supply shortage
- 3,990 left, ready to ship from another location
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | $6.835 | $13.67 |
| 50 - 98 | $6.715 | $13.43 |
| 100 - 248 | $6.595 | $13.19 |
| 250 - 998 | $6.48 | $12.96 |
| 1000 + | $6.37 | $12.74 |
*price indicative
- RS Stock No.:
- 239-8678
- Mfr. Part No.:
- SQJQ130EL-T1_GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET Gen IV | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00052Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 6.15mm | |
| Height | 1.6mm | |
| Width | 4.9 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET Gen IV | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00052Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals AEC-Q101 | ||
Length 6.15mm | ||
Height 1.6mm | ||
Width 4.9 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQJQ is automotive P-Channel MOSFET which operates at 30 V and 175 °C temperature. This MOSFET used for high power density.
Low resistance
AEC-Q101 qualified
UIS tested
Thin package
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