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Infineon IPL N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8

RS Stock No.:: 240-6622P
Mfr. Part No.:: IPL65R160CFD7AUMA1
Brand:: Infineon

Infineon IPL N-Channel MOSFET, 21 A, 650 V Enhancement, 5-Pin ThinPAK 8x8

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Units	Per unit	Saving
10 - 98	$8.29	-
100 - 248	$8.08	$21.00
250 - 498	$7.88	$102.50
500 +	$7.68	$305.00

*price indicative

RS Stock No.:: 240-6622P
Mfr. Part No.:: IPL65R160CFD7AUMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	650V
	Package Type	ThinPAK 8x8
	Series	IPL
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	171W
	Maximum Operating Temperature	150°C
	Length	8.1mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 650V
	Package Type ThinPAK 8x8
	Series IPL
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 171W
	Maximum Operating Temperature 150°C
	Length 8.1mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - IPL65R160CFD7AUMA1

The Infineon 650V CoolMOS™ CFD7 super junction MOSFET comes in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behaviour, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.

Significantly reduced switching losses compared to competition

Extra safety margin for designs with increased bus voltage

Improved full-load efficiency in industrial SMPS applications

High power density