Microchip MSC015SMA070B4 Type N-Channel MOSFET, 140 A, 12 V, 4-Pin TO-247
- RS Stock No.:
- 241-9249P
- Mfr. Part No.:
- MSC015SMA070B4
- Brand:
- Microchip
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 241-9249P
- Mfr. Part No.:
- MSC015SMA070B4
- Brand:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-247 | |
| Series | MSC015SMA070B4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 215nC | |
| Maximum Gate Source Voltage Vgs | 2V | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-247 | ||
Series MSC015SMA070B4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 215nC | ||
Maximum Gate Source Voltage Vgs 2V | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature T equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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