Infineon ISP Type P-Channel MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-223 ISP12DP06NMXTSA1

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Subtotal (1 pack of 5 units)*

$10.52

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$12.10

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5$2.104$10.52
10 - 95$2.06$10.30
100 - 245$2.014$10.07
250 - 495$1.966$9.83
500 +$1.922$9.61

*price indicative

Packaging Options:
RS Stock No.:
243-9271
Mfr. Part No.:
ISP12DP06NMXTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

60V

Series

ISP

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -2.8 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.

Surface Mount technology

Logic level availability

Easy interface to Microcontroller Unit (MCU)

Fast switching

avalanche ruggedness

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