Infineon IAUC N-Channel MOSFET, 80 A, 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC80N04S6N036ATMA1
- RS Stock No.:
- 243-9316
- Mfr. Part No.:
- IAUC80N04S6N036ATMA1
- Brand:
- Infineon
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | $0.674 | $3,370.00 |
| 10000 - 10000 | $0.644 | $3,220.00 |
| 15000 + | $0.614 | $3,070.00 |
*price indicative
- RS Stock No.:
- 243-9316
- Mfr. Part No.:
- IAUC80N04S6N036ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IAUC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SuperSO8 5 x 6 | ||
Series IAUC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUC Series MOSFET, 20V Maximum Drain Source Voltage, 80A Maximum Continuous Drain Current - IAUC80N04S6N036ATMA1
This MOSFET is a power-switching transistor designed for high-current, surface-mount applications in harsh environments. It operates as an N-channel enhancement device and is suited to thermal and electrical duty where elevated temperatures and robust current handling are required. The component is RoHS approved and built to automotive qualification standards for use in demanding vehicle electronics.
Features and Benefits:
• Maximum continuous drain current 80 A enables high-current delivery
• Very low RDS(on) 1.4 mΩ reduces conduction losses
• Maximum power dissipation 81 W supports heavy switching loads
• Gate charge Qg 80 nC allows predictable drive requirements
• Maximum VDS 20 V permits low-voltage system integration
• Very low RDS(on) 1.4 mΩ reduces conduction losses
• Maximum power dissipation 81 W supports heavy switching loads
• Gate charge Qg 80 nC allows predictable drive requirements
• Maximum VDS 20 V permits low-voltage system integration
Applications
• Suitable for DC-DC converter stages in automotive systems
• Used with power-management modules in electrified vehicles
• Ideal for motor-drive MOSFET stages in auxiliary systems
• Can be used for battery protection and power distribution
• Used with power-management modules in electrified vehicles
• Ideal for motor-drive MOSFET stages in auxiliary systems
• Can be used for battery protection and power distribution
What gate-drive considerations are necessary for efficient switching?
Expect a typical total gate charge of 80 nC, so gate drivers must source and sink adequate current to achieve desired switching speeds while managing switching losses.
How does thermal range affect deployment in vehicle electronics?
The device supports operation from -55°C to 175°C, enabling placement near heat-generating components and within engine-bay ambient conditions.
What mounting and package constraints apply to circuit layout?
It is supplied in a SuperSO8 5x6 surface-mount package with eight pins, requiring a PCB footprint and thermal management consistent with that package type.
Which voltage and polarity limitations should designers observe?
The device has a maximum gate-to-source voltage of 20 V and a maximum drain-to-source voltage of 20 V, so system voltages must remain within those limits.
Related links
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