Infineon IMBF N-Channel MOSFET, 64 A, 100 V N, 7-Pin TO-263

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Subtotal 10 units (supplied on a continuous strip)*

$132.60

(exc. GST)

$152.50

(inc. GST)

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10 - 99$13.26
100 - 249$11.94
250 - 499$10.74
500 +$9.67

*price indicative

Packaging Options:
RS Stock No.:
249-6950P
Mfr. Part No.:
IMBF170R450M1XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

IMBF

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon IMBF Series MOSFET, 100V Drain Source Voltage, 64A Continuous Drain Current - IMBF170R450M1XTMA1


This MOSFET is a high-current N-channel transistor designed for power switching in surface-mounted assemblies. It operates across a wide temperature span suitable for demanding environments and provides low conduction losses and appreciable power handling within systems requiring robust gate-drive control.

Features and Benefits:


• Low on-resistance of 1.7mΩ reduces conduction losses and heat
• 100V drain-source rating enables medium-voltage switching applications
• 64A continuous drain current supports high-current power stages
• 81W power dissipation permits sustained thermal loading
• 80nC typical gate charge allows efficient switching with moderate drive
• 20V gate-source limit provides margin for rugged gate-drive designs

Applications


• Suitable for DC-DC converters in industrial power supplies
• Ideal for motor-drive stages in power-electronics systems
• Used for load switching in high-current battery management
• Can be used for synchronous rectification in power converters
• Appropriate for surface-mount power modules on Compact boards

What gate-drive considerations are necessary for Rapid switching?


Use a driver capable of sourcing and sinking the 80nC gate charge to achieve the desired dV/dt while managing switching losses.

How should thermal management be approached in designs?


Implement adequate PCB copper area and thermal vias under the TO-263 footprint to dissipate the 81W junction loss during continuous operation.

What limits protect the device from excessive gate voltage?


Keep gate-drive amplitude within the 20V gate-source maximum to avoid gate-oxide stress and possible device failure.

How does the operating temperature range affect application selection?


The −55°C to 175°C range enables deployment in environments with extreme cold or elevated ambient temperatures where other components may be unsuitable.

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