Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1
- RS Stock No.:
- 250-0542
- Mfr. Part No.:
- BSS138WH6327XTSA1
- Brand:
- Infineon
This image is representative of the product range
Get a bulk buy discount
Add 20 more to save $1.02
View bulk pricing optionsSubtotal (1 pack of 10 units)*
$5.09
(exc. GST)
$5.85
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
Temporarily out of stock
- 18,000 unit(s) shipping from 26 August 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 10 | $0.509 | $5.09 | - |
| 20 - 90 | $0.458 | $4.58 | $1.02 |
| 100 - 240 | $0.413 | $4.13 | $9.60 |
| 250 - 490 | $0.372 | $3.72 | $34.25 |
| 500 + | $0.338 | $3.38 | $85.50 |
*price indicative
- RS Stock No.:
- 250-0542
- Mfr. Part No.:
- BSS138WH6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-323 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6000mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-323 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6000mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 60V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSS138WH6327XTSA1
This n-channel enhancement device is a Compact surface-mount transistor designed for switching and amplification in constrained assemblies. It operates over a wide thermal range and is suited to environments requiring elevated temperature tolerance and standardised automotive qualification. The package facilitates automated soldering onto board assemblies where small-signal handling and thermal performance are required.
Features and Benefits:
• 60V maximum drain-source voltage enables higher-voltage switching capability
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation
Applications
• Suitable for signal switching in Compact control modules
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices
What are the permissible gate-voltage limits?
The gate may be driven up to 20V relative to the source before gate constraints are exceeded.
How does gate charge affect drive requirements?
An 80 nC typical gate charge at rated drive implies moderate transient energy is required from the gate driver.
What thermal extremes can the device withstand?
It operates down to -55°C and up to +150°C for broad environmental capability.
Related links
- Infineon BSS Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323
- Infineon BSS Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323
- Infineon BSS Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- Infineon BSS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-89
- Infineon BSS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-89 BSS225H6327FTSA1
- Infineon BSS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6433XTMA1