Infineon BSS Type N-Channel MOSFET, 2.30 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1
- RS Stock No.:
- 250-0555
- Mfr. Part No.:
- BSS306NH6327XTSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (3000 units, on reels of 3000)*
$609.00
(exc. GST)
$699.00
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
In Stock
- 15,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | $0.203 | $609.00 |
| 6000 - 6000 | $0.183 | $549.00 |
| 9000 + | $0.165 | $495.00 |
*price indicative
- RS Stock No.:
- 250-0555
- Mfr. Part No.:
- BSS306NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BSS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BSS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes N-channel Enhancement mode small signal MOSFET transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS 2, Small-Signal-Transistor. The logic level (4.5V rated) and Avalanche rated. It is 100% lead-free and Halogen free.
N-channel, Enhancement mode
Logic level 4.5V rated
Maximum power dissipation is 500mW
Related links
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS315PH6327XTSA1
- Infineon BSS Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323
- Infineon BSS Type P-Channel MOSFET 100 V Depletion, 3-Pin SOT-23
- Infineon BSS Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- Infineon BSS Type P-Channel MOSFET 100 V Depletion, 3-Pin SOT-23 BSS169H6327XTSA1
- Infineon BSS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23